PNS CNS/SCNS LNS/HELNS/CLNS DNS
Evaporation source position Side Center (Moving) Center
Distance between evaporation source and substrate Long Medium Short Medium
Movement Substrate

Rotation
No Movement Substrate or

Source Scan
No Movement
Material using efficiency
Mask temperature
Mask shadow
Substrate size ≤ 3.5th G ≤ 4th G ≥ 4th G ≥ 4th G
 
  Point evaporation
source
CNS S-CNS LNS DNS
Distance between
evaporation source and substrate
850 mm 450 mm 500 mm 150~350mm 350 mm
Evenness ~ 3 %, substrate rotation < 3 %  < 3 % < 3 % < 5 %
Materials using efficiency ~ 5 % ~ 10 % ~ 18 % 20 ~ 50 % ~ 40 %
 
 
   
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