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PNS |
CNS/SCNS |
LNS/HELNS/CLNS |
DNS |
Evaporation source position |
Side |
Center |
(Moving) |
Center |
Distance between evaporation source and substrate |
Long |
Medium |
Short |
Medium |
Movement |
Substrate
Rotation |
No Movement |
Substrate or
Source Scan |
No Movement |
Material using efficiency |
ⅹ |
○ |
◎ |
◎ |
Mask temperature |
◎ |
◎ |
ⅹ |
○ |
Mask shadow |
○ |
◎ |
○ |
◎ |
Substrate size |
≤ 3.5th G |
≤ 4th G |
≥ 4th G |
≥ 4th G |
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Point evaporation source |
CNS |
S-CNS |
LNS |
DNS |
Distance between evaporation source and substrate |
850 mm |
450 mm |
500 mm |
150~350mm |
350 mm |
Evenness |
~ 3 %, substrate rotation |
< 3 % |
< 3 % |
< 3 % |
< 5 % |
Materials using efficiency |
~ 5 % |
~ 10 % |
~ 18 % |
20 ~ 50 % |
~ 40 % |
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