PNS CNS/SCNS LNS/HELNS/CLNS DNS Evaporation source position Side Center (Moving) Center Distance between evaporation source and substrate Long Medium Short Medium Movement Substrate Rotation No Movement Substrate or Source Scan No Movement Material using efficiency ⅹ ○ ◎ ◎ Mask temperature ◎ ◎ ⅹ ○ Mask shadow ○ ◎ ○ ◎ Substrate size ≤ 3.5th G ≤ 4th G ≥ 4th G ≥ 4th G     Point evaporation source CNS S-CNS LNS DNS Distance between evaporation source and substrate 850 mm 450 mm 500 mm 150~350mm 350 mm Evenness ~ 3 %, substrate rotation < 3 %  < 3 % < 3 % < 5 % Materials using efficiency ~ 5 % ~ 10 % ~ 18 % 20 ~ 50 % ~ 40 %
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