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| It uses linear and long nozzle, which is similar with linear evaporation source. But because nozzle’s structure maintains a fixed angle, by having it ejecting both sides, this evaporation source can deposit even thin film under the fixed condition. |
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Under the condition that substrate and evaporation source are fixed, it can be used for substrate for the 4th generation (73x92 cm) and higher. |
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By improving doping evenness and mask shadow phenomenon, able to ensure the highest quality |
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Minimize particle generation by transferring substrate and align miss as well |
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Fast mass production performance (Fast Tack Tim) and high material using efficiency (~40%) |
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2nd Gen. DNS
370 × 470 |
4th Gen. DNS
730 × 920 / 730 × 460 |
| Dimension (L x H x W) |
700 × 125 × 60 |
1250 × 125 × 60 |
| Capacity |
500 cc |
1000 cc |
| Powe |
20VDC 10A |
30VDC 20A |
| Deposition Rate |
~ 5 Å/sUser MUST Specify deposition rate at Time of Order |
| Uniformity |
Less than ± 5 % |
| Maximum operating Temp. |
600 ℃ |
| Thermocouple |
Double wire K - type |
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